Growth and doping of ZnSe_xTe_<1-x> films for ZnTe based green light emitting doping
Details
ZnSe_xTe_<1-x> films were grown by remote plasma enhanced MOCVD for the purpose of obtaining the n-type ZnTe based single crystal and the control of its band-gap energy. The resistivity of ZnTe was not changed, when ZnTe films were grown by using n-butyliodine doping. On the other hand, ZnSe_xTe_<1-x> films with the composition ratio x in the range of 0 to 1 have been obtained when change the ratio of Se and Te source. The resistivity of ZnSe_<0.2>Te_<0.8> film was decreased by iodine doping with n-type conductivity. Therefore, ZnSe_xTe_<1-x> films are effective not only band-gap control but also formation of n-type ZnTe based crystal film.
