Abstract
(Sr_<1-x>Ca_x)S:Cu,F solid solution thin films were deposited using solid solution evaporation source by electron beam evaporation and then annealed at 900℃ in Ar or H_2S by rapid thermal annealing (RTA) technique. The shifts toward tohigher 2 θ of XRD peaks and shorter wavelength of PL spectra with increasing x could be obtained. It was suggest that the annealing in H_2S induces Sr lack and formation of Cu^+-Cu^+ dimer center. The thin film electroluminescent (TFEL) devices using the S:Cu,F thin films annealed by RTA in Ar or co-deposited with H_2S were fabricated. They showed CIE color coordinates of (0.16, 0.23) and (0.16, 0.21), respectively. The results suggest that the TFEL devices with good chromaticity can be fabricated by using the SrS:Cu,F solid solution thin films.
