SrS:Ce薄膜EL素子のアルカリ金属添加によるSr欠陥の補償効果(発光型・非発光型ディスプレイ合同研究会)

深田 晴己; 篠倉 明日香; 木村 隆宏; 大観 光徳; 田中 省作; 小林 洋志; 中西 洋一郎

doi:10.11485/itetr.27.4.0_37

27.4

Session ID : IDY2003-10

DOI https://doi.org/10.11485/itetr.27.4.0_37

Conference information

Suppression of Formation of Sr Vacancies in SrS:Ce Thin Film EL Devices by Alkali Metal Doping

Haruki FUKADA, Asuka SASAKURA, Takahiro KIMURA, Koutoku OHMI, Shosaku TANAKA, Hiroshi KOBAYASHI, Yoichiro NAKANISHI

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Keywords: SrS:Ce Thin Film EL Device, Alkali Metal Doping, Rb, Sr Vacancy, Ce^<3+>-V_<Sr> Complex Center, Ce Concentration

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Abstract

Alkali metal doped SrS:Ce,M (M=Na, K, or Rb) thin film EL devices have been prepared by electron-beam evaporation. Alkali metal doping causes suppression of formation of Sr vacancies, and results in decrease of Ce^<3+>-V_<Sr> complex center formation. Among those dopants, Rb is the most effective. The SrS:Ce,Rb phosphor powder prepared with Ce concentration of 1.0 mol% shows the strongest photoluminescence with the bluish-green luminescence due to isolated Ce^<3+> centers.

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