Abstract
High-luminance thin-film electroluminescent devices were fabricated using newly developed Mn-activated (Y_2O_3)_<1-x>-(Ga_2O_3)_x phosphors with a Ga_2O_3 content of 0 to 100 mol.%. Luminances of 7250 cd/m^2 for yellow emission and 1258 cd/m^2 for green emission were obtained in a devices fabricated using a ((Y_2O_3)_<0.5>-(Ga_2O_3)_<0.5>):Mn and a ((Y_2O_3)_<0.3>-(Ga_2O_3)_<0.7>):Mn thin-film emitting layer, respectively.
