ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
27.4
Session ID : IDY2003-11
Conference information
High-Luminance Thin-Film EL Device Using Mn-activated Y_2O_3-Ga_2O_3 Phosphor
Youhei KOBAYASHIYasuyuki SUZUKIToshihiro MIYATATadatugu MINAMI
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Abstract
High-luminance thin-film electroluminescent devices were fabricated using newly developed Mn-activated (Y_2O_3)_<1-x>-(Ga_2O_3)_x phosphors with a Ga_2O_3 content of 0 to 100 mol.%. Luminances of 7250 cd/m^2 for yellow emission and 1258 cd/m^2 for green emission were obtained in a devices fabricated using a ((Y_2O_3)_<0.5>-(Ga_2O_3)_<0.5>):Mn and a ((Y_2O_3)_<0.3>-(Ga_2O_3)_<0.7>):Mn thin-film emitting layer, respectively.
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© 2003 The Institute of Image Information and Television Engineers
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