ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
27.4
Session ID : IDY2003-15
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Oxidation process to ZnO from ZnS epitaxial film on Si substrate
Aki MIYAKE, Takato NAKAMURA, Naoto AZUMA, Toru AOKI, Hiroko KOMINAMI, Yoichiro NAKANISHI, Yoshinori HATANAKA
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Keywords: ZnS, ZnO, oxidation, Gibbs free energy, TG-DTA
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Abstract
ZnO epitaxial thin film was obtained on Si substrate by oxidation of ZnS epitaxial thin film deposited on Si substrate. This oxidation process was analyzed by using Gibbs free energy calculation and TG-DTA measurement. TG curve had one step and the weight change showed about 16.4% decrease. DTA curve had one peak. It was shown from calculation result and TG-DTA, ZnS is changed to ZnO by one step. Expected reactions are ZnS+3/2O_2→ZnO+SO_2,ZnS+2O_2→ZnO+SO_3,ZnS+1/2O_2→ZnO+1/2S_2.
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© 2003 The Institute of Image Information and Television Engineers
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