ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
27.4
Session ID : IDY2003-16
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Growth and emission property of ZnO film by hydrogen remote plasma CVD
Yoshimi SHIMIZUAtsushi NAKAMURAToru AOKIJiro TEMMYOU
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Abstract
c-plane ZnO films were grown on a-plane sapphire substrate by remote plasma enhanced chemical vapor deposition using a diethylzinc and oxygen gas with hydrogen plasma radicals, which was generated by rf-hollow cathode jet plasma, in order to decompose the diethylzinc at low temperature. ZnO (0001) films were grown on sapphire (11-20) substrates at substrate temperature 300℃. Deep emission of PL spectra was decreased by control of H_2 and O_2 gas flow ratio.
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© 2003 The Institute of Image Information and Television Engineers
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