Growth and conductivity control of ZnSeTe alloy films by remote hydrogen plasma assisted MOCVD
Details
ZnSe_xTe_<1-x> alloy films were grown by remote plasma enhanced MOCVD for the purpose of obtaining the n-type ZnTe based single crystal and the control of its band-gap energy. The resistivity of ZnTe was not changed although n-butyliodine was introduced as a dopant source in ZnTe films growth. On the other hand, ZnSe_xTe_<1-x> films with the composition ratio x in the range of 0 to 1 have been obtained by changing the ratio of Seand Te source. The resistivity of ZnSe_<0.2>Te_<0.8> film was decreased about 100 Ω cm with n-type conductivity by iodine doping. Therefore, ZnSe_xTe_<1-x> films are effective not only band-gap control but also formation of n-type ZnTe based crystal film.
