MOCVD growth of ZnO thin films using Oxygen remote plasma
Details
ZnO has been grown by a remote plasma enhanced MOCVD technique using Oxygen plasma from Diethyl Zinc (DEZn). When hydrogen and nitrogen were used as carrier gas, the difference was looked at by the growth rate of ZnO film, and growth rate became large when a hydrogen carrier was used. Moreover, growth rate changed also with the rates of hydrogen gas flux and plasma oxygen flux. From the result which measured the plasma luminescence spectrum at the time of crystal growth, the growth mechanism by the interaction by oxygen plasma and hydrogen gas was proposed.
