Abstract
Operation methods for high frame rate, linear response, wide dynamic range (DR) and high S/N ratio in a CMOS image sensor are discussed. The color CMOS image sensor which consists of the 1/3-inch, 800^H×600^V pixels and 5.6-μm pixel pitch has been fabricated by 0.18-μm 2P3M CMOS technology. The image sensor operates the total frame rate of 1/13-sec with three-time voltage readout operations and one current readout operation and have realized full linear photoelectric conversion responses, 26-dB S/N ratio for the image of the 18-% gray card at all integration operation switching points and the 207-dB DR.
