Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode

Abstract

We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was fabricated using a low-thermal-budget process that achieved low contact resistivity, high on-current density of 8MA/cm^2 and low off-current density of 100A/cm^2. The improvement in the properties of poly-Si diode makes the set/reset operation of the cross-point 4F^2 cell possible, leading to the size reduction of phase change memory chip.