Abstract
A Stress Assisted Magnetization Reversal (SAMR) method has been demonstrated in order to reduce a power consumption during magnetization reversal process in a perpendicular magenetoresistive random access memory. In this study, a giant magnetoresistive multilayer of Cu(15nm)/Terfenol-D(10nm)/Cu(3nm)/TbFeCo(30nm)/Cu(15nm) were prepared. By using both of an upper and a bottom antioxide layers of the Cu, the multilayer kept its perpendicular magnetization after baked at 100℃ for 2 minutes. Perpendicular component of magnetization reversal in the GMR multilayer were observed during SAMR process by anomalous Hall effect. As a result, the magnetization of a free layer is shifted from perpendicular to in-plane under a stress application of 279MPa.
