Abstract
The theoretical current density-voltage (J-V) characteristic equation was derived by the extracted paramete acceding to a device simulation, and the physical OLED analog behavioral model for SPICE model described by Verilog-A language was created based on the theoretical J-V characteristic equations. The model is based on the carrier-balance betwee the hole and electron injected through Schottky barrier at anode and cathode. The accuracy of this model was examined by comparing with the results from the device simulation.
