A 300mm Wafer-size CMOS Image Sensor

Abstract

A 202×205mm^2, CMOS image sensor is fabricated on 300mm wafer in 0.25μm 1P3M CMOS process. This sensor has 1.6M pixels, a programmable in pixel voltage amplifier, a differential readout circuitry on the column signal path. As a result, this sensor enables the low-noise and high sensitivity. In this paper, we describe the specifications and performance of the wafer-size CMOS image sensor.