Abstract
Fast addressing is essential for a high field frequency PDP. We analyzed the relation between addressing delay time T and initial number of electrons n_0 in a Ne filled cell with MgO protective layer, and found that the variation of ?T was mainly caused by the ?-action. If n_0=16, ?T becomes very small with the miss addressing rate less than 10^<-10>. This condition is realized if there are projection parts on the MgO layer.
