Infrared Silicon photodetector for 1.3 μm-band using stimulated emission via a dressed photon
Details
A novel photodetector using a Si crystal containing a p-n homojunction was fabricated by dressed photon-phonon-assisted annealing. The photosensitivity of the device for incident light with a wavelength of 1.16μm or longer was three-times higher than that of a reference commercial Si-PIN photodiode. The photosensitivity increased with the increase in a forward current. We achieved a photosensitivity of 0.1 A/W for incident light with a wavelength of 1.32 μm at the forward current density of 9 A/cm^2. This value corresponds to quantum efficiency of 0.1 and at least 4000-times higher than the zero-bias photosensitivity. This increase of the photosensitivity was due to the manifestation of optical amplification cause by the forward current injection. For a forward current density of 9 A/cm^2, the small-signal gain coefficient of the optical amplification was 2.2 × 10^<-2>, and the saturation power was 7.1 × 10^<-2> mW.
