All issues
Predecessor
36.50
Displaying 1-13 of 13 articles from this issue
- |<
- <
- 1
- >
- >|
-
Article type: Cover
Pages Cover1-
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (10K) -
Article type: Index
Pages Toc1-
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (38K) -
Keita YASUTOMI, Zhuo Li, Keiichiro KAGAWA, Hirohiko NIIOKA, Mamoru HAS ...Article type: Article
Session ID: IST2012-61
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThe paper presents a time-resolved CMOS image sensor with Draining Only Modulation(DOM) pixels for fluorescence lifetime imaging. The proposed DOM pixels, which enables signal charge transfer without any transfer gates, provides high-speed charge modulation and repetitive accumulation at very low light level. The prototype imager demonstrates loss-free charge accumulation and fluorescence lifetime measurements for different fluorescent samples.View full abstractDownload PDF (4874K) -
Takuma YAMAMOTO, Yasunori TAGUCHI, Toshiyuki ONOArticle type: Article
Session ID: IST2012-62
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThe focused plenoptic camera has recently gained a lot of attention. The focused plenoptic camera constructed with internal microlens arrays captures a compound eye image such as an image in the eyes of an insect. Microlens images in a compound eye image are scaled up by interpolation. Then an image focused on the distance corresponding to the magnification of the microlens images is generated by integrating the scale-up microlens images. However, in the case of high magnification, because of a blur of interpolation, the resolution of an object which should focus in the refocused image can not enhance. To overcome the above problem, this paper presents a new resolution enhancement method of refocused image based on super-resolution by inverse transformation of an observation process. Experimental results demonstrated the effectiveness of proposed method.View full abstractDownload PDF (1945K) -
Keiichiro KAGAWA, Bo ZHANG, Min-Woong SEO, Keita YASUTOMI, Shoji KAWAH ...Article type: Article
Session ID: IST2012-63
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSMulti-aperture cameras, which are composed of lenses and image sensors, are attracting more attention recently. We have proposed a low-noise and compact multi-aperture camera using low-noise and high-dynamic range CMOS imagers based on a combination of the folding integration and the cyclic ADC. A selective averaging technique reduces dark current and random telegraph signal (RTS) noise without any interpolation. A numerical simulation showed that large dark current and the RTS noise was removed by the selective averaging technique.View full abstractDownload PDF (7668K) -
Yoshimasa KAWATA, Wataru INAMI, Yasunori NAWAArticle type: Article
Session ID: IST2012-64
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe propose electron beam excitation assisted optical microscope, and demonstrated its resolution higher than 50 nm. In the microscope, a light source in a few nanometers size is excited by focused electron beam in a luminescent film. The microscope makes it possible to observe dynamic behavior of living biological specimens in various surroundings, such as air or liquids. Scan speed of the nanometric light source is faster than that in conventional near-field scanning optical microscopes. The microscope enables to observe optical constants such as absorption, refractive index, polarization, and their dynamic behavior on a nanometric scale. The microscope opens new microscopy applications in nano-technology and nano-science.View full abstractDownload PDF (579K) -
Takeharu TANI, Masayuki NAYAArticle type: Article
Session ID: IST2012-65
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWith scaling down of image sensor, pixel structure became to be comparable to wavelength of light. To collect light into submicron region is a technique of nanophotonics. To design pixel structure of image sensor, accurate treatment of light as electromagnetic field is important. We will introduce our experience, building electromagnetic optical simulator to design pixel structure, linking optical and device simulator and designing high sensitive sensor.View full abstractDownload PDF (633K) -
Junichi TAKAHARAArticle type: Article
Session ID: IST2012-66
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSNanoplasmonics is new field of photonics born by fusion of metal photonics and nanotechnology. We can overcome diffraction limit of light by using negative dielectric optical waveguides (i.e. plasmonic waveguides) instead of conventional dielectric optical waveguides. Nowadays, plasmonic waveguides are considered to be a key component of nanoplasmonics. In this paper, we introduce principles of plasmonic waveguide and describe the recent progress of our experimental study about plasmonic wave-guiding. We also describe future perspective towards nano-optical integrated circuits.View full abstractDownload PDF (5570K) -
Hiroshi INOKAWA, Hiroaki SATOH, Atsushi ONO, Ken KAWAKUBOArticle type: Article
Session ID: IST2012-67
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIn order to enhance the performance and functionality of the pn-junction photodiode in silicon on insulator (SOI), surface plasmon antenna is introduced. In case of the 100-nm-thick silicon, external quantum efficiency of the photodiode can be increased by nearly an order of magnitude. The antenna shows wavelength and polarization selectivities, and incident angle dependence, and the peak wavelength and the polarization angle can be tailored only by changing the layout design. Consequently a variety of photodiodes with different characteristics can be integrated in a single chip. A wider application of this photodiode can be expected along with the evolution of the SOI-based large-scale integrated circuits (LSIs).View full abstractDownload PDF (661K) -
Tadashi KawazoeArticle type: Article
Session ID: IST2012-68
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA novel photodetector using a Si crystal containing a p-n homojunction was fabricated by dressed photon-phonon-assisted annealing. The photosensitivity of the device for incident light with a wavelength of 1.16μm or longer was three-times higher than that of a reference commercial Si-PIN photodiode. The photosensitivity increased with the increase in a forward current. We achieved a photosensitivity of 0.1 A/W for incident light with a wavelength of 1.32 μm at the forward current density of 9 A/cm^2. This value corresponds to quantum efficiency of 0.1 and at least 4000-times higher than the zero-bias photosensitivity. This increase of the photosensitivity was due to the manifestation of optical amplification cause by the forward current injection. For a forward current density of 9 A/cm^2, the small-signal gain coefficient of the optical amplification was 2.2 × 10^<-2>, and the saturation power was 7.1 × 10^<-2> mW.View full abstractDownload PDF (649K) -
Article type: Appendix
Pages App1-
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (79K) -
Article type: Appendix
Pages App2-
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (79K) -
Article type: Appendix
Pages App3-
Published: November 14, 2012
Released on J-STAGE: September 21, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (79K)
- |<
- <
- 1
- >
- >|