A Statistical Evaluation of Random Telegraph Noise of In-pixel Source Follower Equivalent Buried and Surface Channel Transistors

Abstract

Using large-scale array test circuit, both static characteristics and random telegraph noise (RTN) of in-pixel source follower equivalent transistors with buried and surface channel structures were statistically evaluated under various current and body bias conditions. The distribution of noise intensities, correlations between RTN amplitude and threshold voltage and subthreshold swing were analyzed. The device optimization guideline of buried channel transistor is discussed.