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Article type: Cover
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Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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Article type: Index
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Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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Naohisa SENGOKU, Tatsuya HIRATA, Keishi TACHIKAWA, Tetsuya NAKAMURA, H ...
Article type: Article
Session ID: IST2013-6
Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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We have developed 1.12um cell size low-noise front side illumination (FSI) CMOS image sensor with light pipe: SmartFSI^[○!R]. Adopting unique bended light pipe structure, and optimizing cell layout and potential profile in photo diode, we realized quite high quantum efficiency (QE) of 72% and low read-out noise of 0.9ele, which exceeds the performance of backside illumination (BSI) image sensors.
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Ryo Ozawa, Kazuhiro Takahashi, Hiroki Oyama, Masato Futagawa, Fumihiro ...
Article type: Article
Session ID: IST2013-7
Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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We have developed a CMOS-MEMS-based label-free protein sensor, which utilizes optical transmittance change by the Fabry-Perot interference to enhance the sensitivity of surface-stress. Theoretical minimum detectable surface stress of the proposed sensor is predicted -1 μN/m which is two orders of magnitude above the peizoresistive type. A read-out tiny photocurrent from the multidimensional arrayed MEMS sensor is signal-processed by integrated source follower circuit, selector, and decoder. We successfully demonstrated the MOSFET and MEMS sensor, and established the heterogeneous integration process. The integrated MEMS sensor array can be used for screening analysis for any cancers.
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Shigetoshi Sugawa
Article type: Article
Session ID: IST2013-8
Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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In this paper, Ultra-high speed (UHS) imaging which was presented in ISSCC 2013 Forum Scientific Imaging are described. Requirements for UHS videography, factors determining the capturing speed in image sensors, recent UHS video cameras, UHS image sensors with a frame rate of more than 1Mfps and a record length more than 100 and UHS imaging at 10Mfps by FTCMOS are included.
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Min-Woong SEO, Keiichiro KAGAWA, Keita YASUTOMI, Shoji KAWAHITO
Article type: Article
Session ID: IST2013-9
Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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Multi-beam laser scanning confocal microscopy with a dedicated CMOS image sensor performing focal-plane pinhole effect, in which any rotating disk is not required, is demonstrated. The axial resolution in the confocal mode measured by the FWHM for a planar mirror was 8.9μm, which is showed that the confocality has been achieved with the proposed CMOS imager sensor.
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Rihito KURODA, Akihiro YONEZAWA, Akinobu TERAMOTO, Tsung-Ling LI, Yasu ...
Article type: Article
Session ID: IST2013-10
Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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Using large-scale array test circuit, both static characteristics and random telegraph noise (RTN) of in-pixel source follower equivalent transistors with buried and surface channel structures were statistically evaluated under various current and body bias conditions. The distribution of noise intensities, correlations between RTN amplitude and threshold voltage and subthreshold swing were analyzed. The device optimization guideline of buried channel transistor is discussed.
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Toshiki Arai, Jun Yonai, Tetsuya Hayashida, Hiroshi Ohtake, Harry van ...
Article type: Article
Session ID: IST2013-11
Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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We have developed a back-side-illuminated image sensor with a burst capturing speed of 5.2 Tpixel/s. The increased sensitivity was achieved with an optical and a time aperture ratio of 100%, and by increasing the optical utilization ratio. The ultrahigh-speed shooting was made possible by an in-situ storage image sensor. The increased maximum frame rate was achieved by reducing the resistance of the wiring and by dividing the image area. The product of the pixel count of 312,360 and maximum frame rate of 16.7 million is 5.2 Tpixel/s, which is the highest performance in high-speed imaging devices to date.
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Jun Aoki, Yoshiaki Takemoto, Kenji Kobayashi, Naofumi Sakaguchi, Mitsu ...
Article type: Article
Session ID: IST2013-13
Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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Rolling shutter distortion free 3D stacked image sensor with an in-pixel storage node of -160dB parasitic light sensitivity has two semiconductor substrates, and one substrate has a backside illuminated photo diode array and the other a storage node array. The image sensor has 8.4μm pitched interconnections. An interconnection yield of over 99.9% is achieved.
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Gota Sato, Shunichi Sukegawa, Taku Umebayashi, Hiroshi Kawanobe, Ken K ...
Article type: Article
Session ID: IST2013-14
Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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To realize a small chip size image sensor with the additional functions, we developed a stacked CMOS image sensor (CIS), which is composed of conventional back illuminated (BI) CMOS image sensor process technology and standard logic process technology. We have achieved 30% reduction in the chip size compared to the same optical size conventional BI-CIS regardless of addition function, also 24dB above the conventional dynamic range is obtained with a unique signal processing technology in high dynamic range (HDR) mode.
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Article type: Appendix
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Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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Article type: Appendix
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Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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Article type: Appendix
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Published: March 15, 2013
Released on J-STAGE: September 21, 2017
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