A Simulation Study of 10 Gfps BSI Image Sensor with Avalanche Multiplication Effect

Abstract

A simulation study is presented to investigate the avalanche multiplication effect on the performance of ultra-high speed backside illuminated (BSI) image sensor. We employ the full-band Monte simulation method for Si to simulate the trajectories of photoelectrons until they reach to the charge collection gate. Avalanche multiplication processes are simulated in the high-field region inserted in the device, and then we discuss the trade-off relationship between the multiplication factor and the electron transit time variation, which ultimately limits the frame rate of the image sensor.