Highly Reliable Oxide TFT with Original Solution-Processed Materials

Abstract

We have developed original oxide materials and inks to make TFT. The original materials were doped-oxide semiconductor, high-k oxide gate insulator, and two oxide passivation layers. They were formed by spin-coating the inks and baking. Patterning was performed by standard photolithography process. The mobility of the TFT was 11.3 cm2/Vs that was comparable to the one of vacuum-processed oxide TFT. Reliability was remarkable with ΔVth less than 0.2 V after 10^5 seconds under bias-temperature stress at 60℃. These results showed the advantages of our materials and the solution process. Keyword O