We have succeeded in developing new achromatic dye-type polarizer with high contrast ratio which is 14 times higher than conventional one. This achromatic polarizer was realized by the optimum combination of dichroic dyes and improvement of dichroic ratio of yellow dye.
We have developed a wide viewing VA-LCD system by the microstructure film with internal air-micro cavities. This microstructure film is attached on LC panel and change the direction of some incident lights from LC panel by reflection at the air cavities. The scattering profile of the film can be controlled with the shape of air cavities according to the characteristics of LC panel. This time, LC alignment directions and BL distribution are optimized as well as the scattering profile of the microstructure film. The color shift and the CR at oblique angles are improved than the conventional VA-LCD.
Nitridosilicates (Ca,Sr)2(1-x)(Aly,Si1-y)5(O,N)8:Eux are efficient and affordable red-emitting phosphors. In this study in order to improve photodegradation of these phosphors we changed the composition of their alkaline-earth ions and had good results. We also used these phosphors as red-emitting phosphors for white-LEDs and could obtain high CRI successfully.
The simultaneous laser thermal stress cutting method (SLTSC) has been newly developed as cutting methods for an electronic device made using ultrathin glass. Compared with other methods, the novel cutting method is one path cutting of the display to achieve high bending strength due to high quality edge.
Distortions of flexible substrates make it difficult for the conventional means, e.g. photolithography using masks, to be applied to the manufacturing of patterned layers. Utilizing inkjet technology, Toray Engineering has developed the equipment which overcomes the problems of the substrate distortions.
We have developed original oxide materials and inks to make TFT. The original materials were doped-oxide semiconductor, high-k oxide gate insulator, and two oxide passivation layers. They were formed by spin-coating the inks and baking. Patterning was performed by standard photolithography process. The mobility of the TFT was 11.3 cm2/Vs that was comparable to the one of vacuum-processed oxide TFT. Reliability was remarkable with ΔVth less than 0.2 V after 10^5 seconds under bias-temperature stress at 60℃. These results showed the advantages of our materials and the solution process.
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