11-3 Domain Wall Behavior along Magnetic Nanowires Fabricated onto Preliminarily-engraved Substrates by Nano-imprint Lithography

Abstract

In order to apply magnetic nanowires into recording devices, the domain-shift length should be controlled uniformly. [Co/Pd] magnetic nanowires with perpendicular anisotropy were fabricated onto silicon substrates with continuous grooved structures built by nanoimprint lithography. We confirmed the domain-shift length could be controlled by the entrapment at these grooved structures.