Earozoru Kenkyu
Online ISSN : 1881-543X
Print ISSN : 0912-2834
ISSN-L : 0912-2834
Research Papers
Adsorption Mechanisms of Organic Compounds on Si Wafer Surfaces
Naoki KAGIShuji FUJIIKazuhiro YUASANorikuni YABUMOTOKatsumasa TANAKA
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1998 Volume 13 Issue 2 Pages 142-148

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Abstract
This study investigated organic compounds in a cleanroom air and on silicon (Si) wafer surfaces using gas chromatograph-mass spectroscopy (GC-MS) and thermal desorption-atmospheric pressure ionization mass spectroscopy (TD-APIMS). Si wafers with hydrogen terminate and with native oxygen exposed in the cleanroom air were analyzed. As an analytical result using TD-APIMS, chained hydrocarbons such as C2-C5 alkanes were detected with higher values than phthalates such as DOP and DBP from Si wafers with hydrogen terminate and with native oxygen exposed in the cleanroom air. The adsorption mechanisms of organic compounds on Si wafers were discussed by thermal desorption spectra. Based on these results, the adsorption hierarchy model of organic compounds on Si wafer surfaces was proposed.
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© 1998 Japan Association of Aerosol Science and Technology
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