1993 年 10 巻 4 号 p. 212-
Rapid melt growth of Ge was conducted by using NASDA (National Space Development Agency of Japan) TR-IA sounding rocket. To understand the growth, the computer simulation was carried out and it was found that the shape of the solid liquid interface will take at first a strong convex shape to the melt. However, the interface during the growth will be quickly recovered to have a nearly flat surface. A single crystal was grown with the velocity of 0.6cm/min which was measured in-situ by CCD camera. The longitudinal cross section of the space grown sample showed the melted and unmelted interface was strongly convex to the melt which agrees with the computer simulation. The dislocation density in the regrown crystal was 105 - 106 /cm2 and this was explained by assuming the presence of strong stress due to the sticking between the melt and the quartz wall.
