Abstract
Wettabilities of SiO2, BN, pBN and graphite substrates with molten InGaAs were measured under Ar atomosphere at temperatures of 1200, 1300 and 1400°C. Molten InGaAs spouted through a hole of substrates even when pushing by a piston was stopped at the position where a top of the melt appeared just above the hole. This might be due to high arsenic dissociation pressures at measure ment temperatures. In addition, migration of drops on pBN and BN substrates was observed. BN and pBN sustrates showed poor wettability, namely appropriate properties as crucible materials. SiO2 and graphite showed high wettability, namely insufficient properties.
