抄録
Wettability of molten In 0.8Gao.2As on various substrates such as graphite, BN, SiO2, pBN, AIN, SiC, Al2O3, SiN and surface tension of molten In 0_8Gao.2As were measured using the sessile drop method to determine a possible crucible materials for crystal growth. The magnitude of contact angle between the melt and substrates was in the following order: pBN, BN, graphite }} AIN } SiN ] SiO2 } A}2O3, SiC. The surface tension of In 0.8Gao.2As was 441-449 mN/m (at 1100-1300°C). The scattering of the measured surface tension was less than 10%. The effect of roughness of SiO2 container surface was also investigated. The roughness was varied from 0.1 to 4 µm. As a result, the wetting behavior was related to the roughness of the container.
