抄録
Surface tension of silicon melt was measured with the sessile drop method under precisely controlling the oxygen partial pressure, Po2, in argon atmosphere in relation to Po2, and temperature . Obtained dependences of the surface tension and its temperature coefficient on Po2, in the range of Po2, Po2,sat were fairly well described with Szyskowski's equation and also the equations of temperature coefficient which were derived by authors . Results obtained under Po2, Po2,sat may have a close relation to the surface tension behavior of silicon melt in the Czochralski process. Deep understanding and explanation of the results obtained under Po2, Po2, sat are still remained for the task of a future study.
