日本マイクログラビティ応用学会誌
Print ISSN : 0915-3616
航空機利用による微小重力環境下における InGaSb 半導体の結晶成長
早川 泰弘 , Krishnan BALAKRISHNAN, 柴田 尚弘, 小松 秀輝, 中村 徹郎, 村上 倫章, 山田 哲生, Daivasigamani KRISHNAMURTHY, 小山 忠信, 小澤 哲夫, 岡野 泰則, 宮澤 政文, 平田 彰, 新船 幸二, Sadie DOST, Le H. DAO, 熊川 征司
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2001 年 18 巻 2 号 p. 97-

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Crystallization studies on InGaSb have been done under reduced gravity (10- 2 G) condition using an airplane and normal gravity (1 G) condition. The resultant InGaSb crystals were found to contain many needle crystals in both the cases. However, in the case of the InGaSb crystal prepared in the reduced gravity condition, more number oflarge sized needle crystals were present than in the sample prepared under normal gravity. This may be due to the reason that the heat transfers under the reduced gravity condition are restricted to some extent as the convective forces are less active than those under the normal gravity.
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© 2001 日本マイクログラビティ応用学会
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