抄録
Si was heated with an electromagnetic levitation process by 15kW high frequency power supply. Samples were coated with C or B by a vacuum deposition device. Conductivity was given to the sample by C or B coated on the surface and heating was possible. We established new levitating process that solidified bulk Si by coating B or C. The crystal growth model of Si could be classified by faceted growth at low undercooling, dendrite growth at intermediate undercooling and continuous growth at high undercooling. Furthermore, we also classified solidification behavior of Si into the three sections at the primary solidification, the recalescence and the secondary solidification by using high-speed camera.
