GAS (Get Away Special) を利用した化合物半導体結晶成長実験

抄録

We ran a GaAs solution growth experiment using NASA Get Away Special program. This was a preliminary study for large scale experiments those planned to be done aboard Spacelab D-2 and Japanese free flyer SFU. Diffusion-controlled crystal growth in microgravity were achieved using our sample setup which eliminated free surface from the solution. Type II striations as traces of macrosteps occurred in both space-and ground­ grown crystals, but, did not occur in center region of space-grown crystal.