抄録
In this paper, a Fermi-Dirac statistics based quantum energy transport (FDQET) model is developed for numerical simulations of high mobility MOSFETs. The QET model allows simulations of carrier transport including quantum confinement and hot carrier effects. Fermi-Dirac statistics are further considered for the analysis of device characteristics with high degeneracy material such as In0.53Ga0.47As. Numerical stability and convergence are achieved by developing an iterative solution method used when Fermi-Dirac statistics are modeled. Numerical results for Si, Ge and In0.53Ga0.47As bulk n-MOSFETs are presented. The FDQET model allows us to evaluate the device characteristics with high degeneracy material such as In0.53Ga0.47As.
