Journal of Advanced Simulation in Science and Engineering
Online ISSN : 2188-5303
ISSN-L : 2188-5303
Papers
Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors
Casey ClendennenNobuya MoriHideaki Tsuchiya
Author information
JOURNAL FREE ACCESS

2015 Volume 2 Issue 1 Pages 171-177

Details
Abstract

Ballistic performance of graphene, silicene, and germanene-nanoribbon field-effect transistors (FETs) with a gate-length of 10 nm has been numerically investigated. The graphene-nanoribbon FET is found to have the largest ON-current when one compare FETs with a nanoribbon channel having a nearly equal band-gap Eg ≈ 0.5 eV. The graphene device exhibits the largest OFF-current due to the smallest effective-mass enhancing the source-drain direct tunneling.

Related papers from these authors
© 2015 Japan Society for Simulation Technology
Previous article Next article
feedback
Top