MASS TRANSFER IN BARREL TYPE EPITAXIAL REACTOR
キーワード:
Mass Transfer Coefficient,
Epitaxial Reactor,
Barrel Type CVD,
Epitaxial Growth Rate,
C.V.D.,
Epitaxial Film
1988 年 21 巻 4 号 p. 339-345
詳細
1988 年 21 巻 4 号 p. 339-345
To investigate the mass transfer phenomenon in a barrel-type epitaxial reactor, air was made to flow upward or downward in the annular space between two vertical concentric cylinders. A carbon cylinder placed in a part of the inner tube was burned by air in a mass transfer rate control region. The reactant concentration distribution was measured in the annular space and the coefficient of mass transfer from the inner tube was obtained.
The effects of Re, Gr, De/l and rw/rs on the mass transfer coefficient were investigated. Empirical equations for the mass transfer coefficient in a barrel-type epitaxial reactor were obtained.
The growth rate of silicon for the H2-SiCl4 system was calculated from these equations at 1473 K in the case of upflow gas or downflow gas. The local growth rate in this reactor was determined.
