Journal of the Ceramic Association, Japan
Online ISSN : 1884-2127
Print ISSN : 0009-0255
ISSN-L : 0009-0255
Microstructure and Properties of Sintered Silicon Carbides Fabricated by Different Methods
Tadashi MARUYAMAHideya KITAMURATakayoshi ISEKI
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1986 Volume 94 Issue 1092 Pages 790-794

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Abstract
Studies were made of effects of fabrication methods on the properties and microstructure of sintered silicon carbides. The specimens used in this investigation were three kinds of commercially available SiC bodies which were fabricated by reaction bonding, pressureless sintering and hot-pressing. The hot-pressed SiC contained a small amount of BeO. Measurements were carried out on density, the polytype by X-ray diffraction method and 4-point bend strength. Microstructural observation was also carried out using an optical microscope, a scanning electron microscope (SEM) and a transmission electron microscope (TEM). The results of density measurement showed that the open porosities of three specimens were negligibly small and that the density of the hot pressed SiC had nearly the theoretical density. The measurement of 4-point bend strength indicated that the reaction bonded SiC had the highest value and the hot-pressed SiC the lowest. The analysis of the polytype indicated that all the specimens consisted mainly of α-SiC of 6H type. In the reaction bonded SiC, about 11% of 3C type (β-SiC) and 9% of free Si were recognized. The average grain diameter and fracture mode of each specimen were determined from observation with an optical microscope and SEM. In the hot-pressed SiC, the fracture occurred mainly at grain boundaries, whereas it occurred mostly in grains in the reaction bonded and pressureless sintered SiC. A lot of stacking faults were observed in all the specimens with a TEM. In addition, small closed pores were often recognized in the pressureless sintered SiC. In the hot-pressed SiC, a contrast originated from strain field within grains was observed, and dislocations near grain boundaries were a characteristic feature of this material. Small short partial dislocations accompanied by stacking fault were often observed in the reaction bonded SiC.
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