Photoluminescence of Fine Semiconductor (CdS, CdSe, Ge) Particle-Doped Films Prepared by a Mutual Counter Diffusion Method and a Sol-Gel Process

Abstract

CdS or CdSe-doped polymer films (acetyl cellulose and polyvinyl alcohol) were prepared by a mutual counter diffusion method. CdS or Ga-doped alumina films were produced by a sol-gel process. Each CdS- or CdSe-doped film exhibited photoluminescence by excitation with an Ar⁺ laser. In particular, the CdS-doped alumina film did not emit photoluminescence derived from a deep trap level, but only one derived from the absorption edge. Moreover, photoluminescence of the Ge-doped alumina film was first observed.