Preparation of TaN_x-TiN Films by CVD

Abstract

TaN_x-TiN films were prepared on fused silica substrates from the gas mixture of TaCl₅-TiCl₄-N₂-H₂ under an atmospheric pressure. The deposition rate, constituent phase, chemical composition and microstructure of the films were investigated as a function of deposition temperature and input gas composition. The films consisted of TaN_x and TiN. At the deposition temperature of 900°C, the deposition rate and the composition of TaN_x-TiN films were in good agreement with expectations based on each deposition behavior of TaN_x and TiN films. On the other hand, at 1000° and 1100°C, the deposition of TaN_x was suppressed in TaN_x-TiN films compared with the expectation. TaN_x-TiN films were consisted of finer particles comparing with TaN_x and TiN films.