Forming Gas Anneal of Bi3.15Nd0.85Ti3O12 Ferroelectric Thin Films

Di WU; Dongsheng WANG; Yu DENG; Aidong LI; Tao YU; Mingsheng ZHANG; Naiben MING

doi:10.14852/jcersjsuppl.112.0.S444.0

Journal of the Ceramic Society of Japan, Supplement 112-1, PacRim5 Special Issue

Session ID : 6

DOI https://doi.org/10.14852/jcersjsuppl.112.0.S444.0

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Host: The Ceramic Society of Japan

Co-host: Iketani Science and Technology Foundation, International Ceramic Federation, Commemorative Organization for the Japan World Exposition '70, The American Ceramic Society, The Australasian Ceramic Society, The Chinese Ceramic Society, The Korean Ceramic Society, Joint Research Consortium of Synergy Ceramics/Fine Ceramics Research Association, Nanotechnology Researchers Network Center of Japan, The Special Coordination Funds for Promoting Science and Technology, Japan National Tourist Organization, Aichi Prefectural Government, CASIO SCIENCE PROMOTION FOUNDATION, DAIKO FOUNDATION, Nagoya Convention and Visitors Bureau, The Asahi Glass Foundation, The Kao Foundation For Arts And Sciences, The Murata Science Foundation, The Ogasawara Foundation for the Promotion of Science & Engineering, ASAHI GLASS CO., LTD. Research Center, CENTRAL GLASS CO., LTD., ELECTRIC GLASS INDUSTRY ASSOCIATION OF JAPAN (EGAJ), Hattori Company, Ltd., Hitachi Research Laboratory, Hitachi, Ltd., HOYA CORPORATION, INAX Corporation, ITOCHU CERATECH CORP., Japan Cement Association, KYOCERA Corporation, KYUSHU REFRACTORIES CO., LTD., MINO CERAMIC CO., LTD., Murata Manufacturing Co., Ltd., NGK INSULATORS LTD., NGK SPARK PLUG CO., LTD., NICHIAS Corporation, NIKKO COMPANY, Nippon Electric Glass Co., Ltd., Nippon Sheet Glass Co., Ltd., NORITAKE CO., LIMITED, Tokuyama Corporation, TOTO LTD.

Papers

Forming Gas Anneal of Bi_3.15Nd_0.85Ti₃O₁₂ Ferroelectric Thin Films

Di WU, Dongsheng WANG, Yu DENG, Aidong LI, Tao YU, Mingsheng ZHANG, Naiben MING

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Keywords: BNdT films, FeRAM, Forming gas

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Abstract

Polycrystalline Bi_3.15Nd_0.85Ti₃O₁₂ (BNdT) ferroelectric thin films were deposited on plantinized Si substrates by chemical solution deposition. The Bi-layered perovskite structure was achieved by rapid thermal annealing the spin-on films at 700°C for 3 min. Well-saturated hysteresis loops with remanent polarization (P_r) around 10 μC/cm² were obtained on Pt/BNdT/Pt capacitors. The effect of forming gas (FG: 5%H₂+95%N₂) anneal on electrical properties and microstructures of BNdT films were characterized by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and electric measurements. P_r values were considerably suppressed after forming gas anneal at 400°C for 10 min. From structure characterization, it is deduced that the suppressed P_r was not due to decomposition of BNdT, but might be ascribed to the increased switching resistance due to formation of polar hydroxyl bonds by penetrated hydrogen ions bonded with oxygen ions.

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