Microstructure and Dielectric Properties of BaO-Bi2O3-TiO2 System Films  Prepared by MOCVD

Hiroshi MASUMOTO; Tetsuro TOHMA; Takashi GOTO

doi:10.14852/jcersjsuppl.112.0.S498.0

Journal of the Ceramic Society of Japan, Supplement 112-1, PacRim5 Special Issue

Session ID : 6

DOI https://doi.org/10.14852/jcersjsuppl.112.0.S498.0

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Host: The Ceramic Society of Japan

Co-host: Iketani Science and Technology Foundation, International Ceramic Federation, Commemorative Organization for the Japan World Exposition '70, The American Ceramic Society, The Australasian Ceramic Society, The Chinese Ceramic Society, The Korean Ceramic Society, Joint Research Consortium of Synergy Ceramics/Fine Ceramics Research Association, Nanotechnology Researchers Network Center of Japan, The Special Coordination Funds for Promoting Science and Technology, Japan National Tourist Organization, Aichi Prefectural Government, CASIO SCIENCE PROMOTION FOUNDATION, DAIKO FOUNDATION, Nagoya Convention and Visitors Bureau, The Asahi Glass Foundation, The Kao Foundation For Arts And Sciences, The Murata Science Foundation, The Ogasawara Foundation for the Promotion of Science & Engineering, ASAHI GLASS CO., LTD. Research Center, CENTRAL GLASS CO., LTD., ELECTRIC GLASS INDUSTRY ASSOCIATION OF JAPAN (EGAJ), Hattori Company, Ltd., Hitachi Research Laboratory, Hitachi, Ltd., HOYA CORPORATION, INAX Corporation, ITOCHU CERATECH CORP., Japan Cement Association, KYOCERA Corporation, KYUSHU REFRACTORIES CO., LTD., MINO CERAMIC CO., LTD., Murata Manufacturing Co., Ltd., NGK INSULATORS LTD., NGK SPARK PLUG CO., LTD., NICHIAS Corporation, NIKKO COMPANY, Nippon Electric Glass Co., Ltd., Nippon Sheet Glass Co., Ltd., NORITAKE CO., LIMITED, Tokuyama Corporation, TOTO LTD.

Papers

Microstructure and Dielectric Properties of BaO-Bi₂O₃-TiO₂ System Films Prepared by MOCVD

Hiroshi MASUMOTO, Tetsuro TOHMA, Takashi GOTO

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Keywords: BaTiO₃, Bi₄Ti₃O₁₂, MOCVD, Dielectric properties, Ferroelectric film

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Abstract

(1-y)BaTiO₃(BT)-yBi₄Ti₃O₁₂(BIT) films in the composition range up to y=0.05 were prepared on (100)MgO substrates by metalorganic chemical vapor deposition (MOCVD). The effect of composition on the microstructure, morphology and dielectric properties of the films was investigated. At y<0.03, the BIT-doped BT films were obtained, and the grain size of films increased with increasing y. BaBi₄Ti₄O₁₅ phase was identified at y=0.03. The BIT-doped BT film of y=0.01 exhibited the maximum dielectric constant of 1010 that was twice as great as that of BT film. The high dielectric constant might be resulted from the increase in grain size. The remanent polarization (2P_r) and the coercive field (2E_C) of the BIT-doped BT film of y=0.01 were 0.7×10^-2 C•m^-2 and 6.0×10⁵ V•m^-1, respectively.

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