Preparation and Properties of Gallium-Indium-Codoped Tin Oxide Sputtering  Targets and Sputtered Thin Films

Akira MITSUI

doi:10.14852/jcersjsuppl.112.0.S752.0

Journal of the Ceramic Society of Japan, Supplement 112-1, PacRim5 Special Issue

セッションID: 9

DOI https://doi.org/10.14852/jcersjsuppl.112.0.S752.0

会議情報

主催: The Ceramic Society of Japan

共催: Iketani Science and Technology Foundation, International Ceramic Federation, Commemorative Organization for the Japan World Exposition '70, The American Ceramic Society, The Australasian Ceramic Society, The Chinese Ceramic Society, The Korean Ceramic Society, Joint Research Consortium of Synergy Ceramics/Fine Ceramics Research Association, Nanotechnology Researchers Network Center of Japan, The Special Coordination Funds for Promoting Science and Technology, Japan National Tourist Organization, Aichi Prefectural Government, CASIO SCIENCE PROMOTION FOUNDATION, DAIKO FOUNDATION, Nagoya Convention and Visitors Bureau, The Asahi Glass Foundation, The Kao Foundation For Arts And Sciences, The Murata Science Foundation, The Ogasawara Foundation for the Promotion of Science & Engineering, ASAHI GLASS CO., LTD. Research Center, CENTRAL GLASS CO., LTD., ELECTRIC GLASS INDUSTRY ASSOCIATION OF JAPAN (EGAJ), Hattori Company, Ltd., Hitachi Research Laboratory, Hitachi, Ltd., HOYA CORPORATION, INAX Corporation, ITOCHU CERATECH CORP., Japan Cement Association, KYOCERA Corporation, KYUSHU REFRACTORIES CO., LTD., MINO CERAMIC CO., LTD., Murata Manufacturing Co., Ltd., NGK INSULATORS LTD., NGK SPARK PLUG CO., LTD., NICHIAS Corporation, NIKKO COMPANY, Nippon Electric Glass Co., Ltd., Nippon Sheet Glass Co., Ltd., NORITAKE CO., LIMITED, Tokuyama Corporation, TOTO LTD.

Note

Preparation and Properties of Gallium-Indium-Codoped Tin Oxide Sputtering Targets and Sputtered Thin Films

Akira MITSUI

著者情報

キーワード: Tin oxide (SnO₂), Gallium oxide (Ga₂O₃), Indium oxide (In₂O₃), Transparent conducting films, Target, Sputtering

会議録・要旨集フリー

詳細

抄録

A new transparent conducting SnO₂-based oxide: Ga-In-codoped SnO₂ (GIT) was investigated. Sintering was carried out at 1500°C for 2 h in air. The sintered body of the GIT including 3.3 mol% Ga₂O₃ and 2.8 mol% In₂O₃ had a high bulk density of 5.9 g•cm^-3, in comparison with 3.8 g•cm^-3 for pure SnO₂. Thus, the sintering characteristics of SnO₂ dramatically improve by adding both Ga₂O₃ and In₂O₃. The resistivity of the sintered body was 6×10^-2 Ω•cm. This value is low enough to be used as DC sputtering targets. The resistivity of the films deposited by DC sputtering using the target at room temperature was 5.6×10^-3 Ω•cm. Moreover, it decreases to less than 2×10^-3 Ω•cm on heat-treating at 250°C in air. The luminous transmittance of the films is more than 80%. These films show high durability for acid, even for hydrofluoric acid.

責任著者(Corresponding author)

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