抄録
Plasma CVD of molybdenum from Mo(CO)6 is tried on several substrates for protective coating. The film deposited is metallic Mo containing carbon and has an amorphous or a semiamorphous structure. The effect of carrier gas, substrate temperature, pressure of plasma reactor, supply rate of Mo(CO)6, glow discharge current and AC frequency on growth of Mo(C) films is studied. It is concluded that (1) H2 gas is more favorable for a carrier gas of Mo(CO)6 than inert He gas because the former suppresses the formation of powdery molybdenum oxide, (2) increase in substrate temperature brings about high deposition rate but this effect is not so large below 200°C, (3) lower pressure of plasma reactor is favorable for higher deposition rate so long as stable glow discharge is possible, (4) deposition rate is dependent on AC frequency as well as discharge current, and (5) larger discharge current brings about higher deposition rate but excessive increase in current, compared to the supply rate of Mo(CO)6, is ineffective. The protectiveness of the plasma CVDed substrate in iodine atmosphere is good when copper is selected as the substrate.
