Si (111) 面上CaF₂薄膜の界面構造

抄録

The structure of the CaF₂/Si (111) interface has been investigated with the use of X-ray crystal truncation rod scattering. The T -site which is just above the first layer Si atom is occupied by an interfacial Ca atom for a type-A interface as well as for a type-B interface. Structural parameters, describing the interface and the structure of the thin film have also been obtained and discussed thoroughly. Crystallinity of the type-A epilayer and that of the type-B epilayer has been compared. For type-B thin film, there is an evidence that a shortinterface-spacing-structure is not an equilibrium state, but can transform to a long-interfacespacing-structure. We are able to gain insight into a possibility that the type-A structure can also transform to a different structure.