抄録
Computer simulation of electromigration (EM) in microelectronics devices has been reviewed and a multi-physics numerical simulation method has been proposed and developed so that the electric current, temperature, stress can be solved simultaneously and the vacancy concentration can be predicted in a seamless framework. The design considerations for resisting EM is also discussed in this work and a shunt structure for solder joint pad is proposed and its potential for the reduction of EM risk is demonstrated.
