Computer experiments of irradiated Al–Si alloys were performed to clarify the mechanism of radiation enhanced segregation. The atomic configurations of pure Al, Al–5 at%Si and Al–10 at%Si with amorphous structure after the irradiation of high energy beam were calculated by the molecular dynamics method. We estimated the threshold energies to create voids in pure Al, Al–5 at%Si and Al–10 at%Si as 0.23, 0.25 and 0.25 keV/nm, respectively. This fact means that addition of Si to Al enhances strength against void formation by beam irradiation. We also confirmed that addition of Si to Al gave strong effect on radiation enhanced segregation. The degree of enhancement depended on the degree of dispersion of Si atoms in Al matrix because the Si atoms enhances clustering of the Al atoms surrounding them.