Abstract
The electrical resistivity measurement and transmission electron microscopy were performed on the binary alloys containing Mg 5 to 15at%. The electrical resistivity of the quenched alloys is well expressed as ρ=2.37+5.3C(100-C)•10-2nΩm. The change of electrical resistivity during isothermal aging at temperatures up to 453K can be explained by a complex growth process of GP zones and dislocation loops. The resistivity gradually lowers during aging at temperatures above 300K where well developed dislocation loops are observed by TEM. This is attributed to solute dilution in the matrix. The resistivity apparently rises during aging at temperatures below 300K relating to the growth of GP zones. A reversion phenomenon is observed for those GP zones. A metastable phase diagram for GP zones in Al-Mg binary system is proposed.
