訂正日: 2008/07/23訂正理由: -訂正箇所: 引用文献情報訂正内容: Wrong : 1) R. H. Dennard, F. H. Gaensslen, L. Kuhn and H. N. Yu: Design of Micron Mos Switching Device,Presented IEDM-Washington D. C. Dec., 1972. 2) J. Hayes: MOS Scaling, Computer Janu., 1980. 3) R. W. Keyes: The Evolution of Digital Electronics Towards VLSI, IEEE J. of Solid-State Circuit, Vol. SC-14 No. 2 Apr., 1979. 5) R. V. Penney: Current-Induced Mass Transport in Aluminum, J. Phys. Chem. Solid, 25: 335, 1964. 6) I. A. Blech and E. S. Meieran: Electromigration in thin Al film, J. Appl. Phys., 40: 485, 1979. 7) T. Mimura, S. Hiyamizu, T. Fuji and K. Nanbu: A New Field-Effect Transistor with Selectively Doped GaAs/n-AlGaAs Heterojunction, Jpn J. Appl. Phys. 19, 1980. 9) T. Mimura, K. Joshin, S. Hiyamizu, K. Hikosaka and M. Abe: High Electron Mobility Transistor Logic, Jpn. J. Appl. Phys., 20 (1981). 10) M. G. Panish and A. Y. Cho: Molecular Beam Epitaxy, IEEE Spectrum April 18-23, 1980. 11) T. G. O'Neill: Production Oriented MBE System, Semiconductor International, Nov. 57-66, 1980. 14) T. C. May and M. H. Woods: A New Physical Mechanisum for Soft Errors in Dynamic Memories, Proc. 1978 International Reliability Physics Symposium (San Diego). 15) T. C. May: Alpha-Particle-Induced Soft Error in Dynamic Memories, IEEE Trans. on Electron Devices.
Right : 1) R. H. Dennard, F. H. Gaensslen, L. Kuhn and H. N. Yu: Design of Micron Mos Switching Device,Presented IEDM-Washington D. C. Dec., 1972. 2) J. Hayes: MOS Scaling, Computer Janu., 1980. 3) R. W. Keyes: The Evolution of Digital Electronics Towards VLSI, IEEE J. of Solid-State Circuit, Vol. SC-14 No. 2 Apr., 1979. 5) R. V. Penney: Current-Induced Mass Transport in Aluminum, J. Phys. Chem. Solid, 25: 335, 1964. 6) I. A. Blech and E. S. Meieran: Electromigration in thin Al film, J. Appl. Phys., 40: 485, 1979. 7) T. Mimura, S. Hiyamizu, T. Fuji and K. Nanbu: A New Field-Effect Transistor with Selectively Doped GaAs/n-AlGaAs Heterojunction, Jpn J. Appl. Phys. 19, 1980. 9) T. Mimura, K. Joshin, S. Hiyamizu, K. Hikosaka and M. Abe: High Electron Mobility Transistor Logic, Jpn. J. Appl. Phys., 20 (1981). 10) M. G. Panish and A. Y. Cho: Molecular Beam Epitaxy, IEEE Spectrum April 18-23, 1980. 11) T. G. O'Neill: Production Oriented MBE System, Semiconductor International, Nov. 57-66, 1980. 14) T. C. May and M. H. Woods: A New Physical Mechanisum for Soft Errors in Dynamic Memories, Proc. 1978 International Reliability Physics Symposium (San Diego). 15) T. C. May and M. H. Woods : Alpha-Particle-Induced Soft Error in Dynamic Memories, IEEE Trans. on Electron Devices.