Preferentially Oriented Growth of Al Thin Films Deposited Rapidly on Si (100) and (111) Substrates

Abstract

  It has been believed that preferentially oriented growth of Al scarcely occurs on Si substrates in an ordinary high vacuum (10^-3 Pa). In order to examine the effect of rapid deposition on the epitaxial growth, we try the evaporation of Al from dual sources of W baskets onto Si (100) and (111) substrates which are heated in an ordinary high vacuum. From the inspection of the Al films 100 to 200 nm in thickness by transmission electron microscopy, it is found that double-positioned {110} grains and (111) ones grow preferentially on the (100) and (111) substrates, respectively, heated at about 600 K.