Abstract
For the purpose of the preparation of pure silicon by the iodide process, the reduction of SiI4 with hydrogen has been investigated in a small scale. Dense silicon layers as well as crystals could be deposited on a hot quartz tube. Higher reduction temperatures led to greater effective reduction yields between 800° and 1200°C and gave a yield over 90%. Higher reduction yield was obtained with rise of H2/SiI4 mole ratio, and a good agreement was found between experimental results and thermodynamically calculated values at 800°C.
