Journal of the Japan Institute of Metals and Materials
Online ISSN : 1880-6880
Print ISSN : 0021-4876
ISSN-L : 0021-4876
Preparation of GaAs1−xPx Compounds from the Melt under Controlled Vapour Pressures
Kozo OsamuraYotaro Murakami
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1971 Volume 35 Issue 7 Pages 639-646

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Abstract

Crystalline solid solutions between GaAs and GaP compounds were prepared from the melt under controlled vapour pressures. The experimental results were found to agree with the theoretical formulae derived in order to calculate the pseudo-equilibrium in a heterogeneous system consisting of two parts with different temperatures. It was assumed that all condensed phases would be regular or sub-regular and that the gas phase is ideal. In addition, some of the thermodynamic properties of the Ga-As-P ternary system were discussed. It was found that one can apply the concept of pseudo-equilibrium to the preparation of crystalline solid solutions of III-V compounds containing two volatile components.

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