Implantation of B, N, and Ar Ion into Al

Abstract

The surface hardness, electrical resistance and microstructure of Al implanted with 10 to 50 keV B⁺, N⁺, and Ar⁺ ions to a dose of 10¹⁵ to 10¹⁷ ions cm⁻² were measured, and the effects of ageing on the above characteristics were studied.
The results are as follows:
(1) The surface hardness of Al implanted with B⁺, N⁺, and Ar⁺ ions increases with the increase of the energy and the dose of ions. The hardness increase is in the following order; B⁺<N⁺<Ar⁺.
(2) The residual electrical resistance of Al implanted with B⁺, N⁺, and Ar⁺ ions increases with the increase of the energy and the dose of ions.
(3) The surface hardness and the residual resistance of Al implanted with B⁺ and N⁺ ions increase by ageing for a dose of 10¹⁷ ions cm⁻², but decrease monotonously by ageing for a dose less than 10¹⁶ ions cm⁻².
(4) The clustreing of the ions or a fine scale precipitate as well as the dislocation line and the dislocation loop are observed in Al specimens which are implanted with more than 10¹⁶ B⁺ ions cm⁻² or more than 10¹⁵ N⁺ or Ar⁺ ions cm⁻². The coarse precipitate and Al-AlB₂ eutectic are formed by ageing in Al implanted with B⁺ ions, and Ar bubbles precipitate in Ar⁺ ion-implanted Al.