Abstract
The recrystallization of vacuum-deposited silver and copper films about 2μ in thickness was investigated by means of transmission electron microscopy, electrical resistivity measurements, differential thermal analysis and X-ray diffraction techniques.
The results of observation were as follows:
In the as-deposited silver films, one of the preferential plane orientations parallel to the substrate was {111}. A ratio of diffracted intensity (I200/I111) reached about 0.4 when held at room temperature; the ratio is expected to result from the random orientation. Recrystallization was observed in the temperature range from 30 to 50°C.
For copper, the recrystallization produced an almost complete reorientation such that {100} planes were parallel to the substrate.
From the measurement of heat released during recrystallization, the grain boundary energies for silver and copper were estimated to be 320±60 erg/cm2 and 810±170 erg/cm2, respectively.
